Electric-field-induced optical second-harmonic generation in ž / poly phenylene vinylene light-emitting diodes
نویسندگان
چکیده
We demonstrate second-harmonic generation in polymeric light-emitting diodes built in a layer structure of indium tin Ž . oxide, poly phenylene vinylene and aluminum. The second-harmonic intensity generated in the active zone of the diode depends quadratically on the applied reverse bias. In order to account for the bias dependence of the measured intensity a simple model is given in that the signal consists of two contributions: a constant, bias-independent contribution from the Ž . indium tin oxiderpoly phenylene vinylene interface and a second one that depends on the effective bias at the organic metal–semiconductor contact. Further applications for second-harmonic generation in organic semiconductors are discussed. q 1999 Elsevier Science B.V. All rights reserved.
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تاریخ انتشار 1999